| PART |
Description |
Maker |
| HD74LS03 74LS03 |
Quadruple 2-input Positive NAND Gates(with Open Colletor Outputs)
Quad. 2-input NAND Gates with Open Collector output
|
HITACHI[Hitachi Semiconductor]
|
| AM28F512A-120JEB AM28F512A-120PEB AM28F512A-120FEB |
Divide-By-Twelve Decade Counter 14-PDIP 0 to 70
Divide-By-Twelve Decade Counter 14-SOIC 0 to 70
Quadruple 2-Input Positive-NAND Gates 14-SOIC -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SO -40 to 85
Quadruple 2-Input Positive-Nor Gates 14-TVSOP -40 to 85
4-Bit Binary Counters 14-SO 0 to 70
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
Quadruple 2-Input Positive-Nor Gates 14-TSSOP -40 to 85 2正输入或非门 14-TSSOP封装40℃到85
Hex Inverters 14-SSOP -40 to 85 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
Hex Inverters 14-TVSOP -40 to 85 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
Hex Inverters 14-SO -40 to 85 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
4-Bit Binary Counters 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32
Quadruple 2-Input Positive-NAND Gates 14-TVSOP -40 to 85 64K X 8 FLASH 12V PROM, 200 ns, PDSO32
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 64K X 8 FLASH 12V PROM, 120 ns, PQCC32
Quadruple 2-Input Positive-NAND Gates 14-TSSOP -40 to 85 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
Hex Inverters 14-SOIC -40 to 85 64K X 8 FLASH 12V PROM, 90 ns, PDIP32
Quadruple 2-Input Positive-Nor Gates 14-SO -40 to 85 64K X 8 FLASH 12V PROM, 70 ns, PQCC32
Quadruple 2-Input Positive-Nor Gates 14-SOIC -40 to 85
|
Advanced Micro Devices, Inc.
PROM
ADVANCED MICRO DEVICES INC
|
| 74LV00AS14-13 |
QUADRUPLE 2-INPUT NAND GATES
|
Diodes Incorporated
|
| 74HC00S14 74HC00S14-13 74HC00T14 74HC00T14-13 |
QUADRUPLE 2-INPUT NAND GATES
|
Diodes Incorporated
|
| 74LV132A 74LV132AS14-13 74LV132AT14-13 |
QUADRUPLE 2-INPUT NAND GATES WITH SCHMITT TRIGGER INPUTS
|
Diodes Incorporated
|
| SN74HC03D SN74HC03N |
<font color=red>[Old version datasheet]</font> QUADRUPLE 2-INPUT POSITIVE-NAND GATES WITH OPEN-DRAIN OUTPUTS
|
TI store
|
| 5962H9651201VCC |
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class V, QML. Lead finish gold. Total dose 1E6 rads(Si).
|
Aeroflex Circuit Technology
|
| 5962H9651201VXA |
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class V, QML. Lead finish solder. Total dose 1E6 rads(Si).
|
Aeroflex Circuit Technology
|
| 5962H9651201QCC |
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class Q, QML. Lead finish gold. Total dose 1E6 rads(Si).
|
Aeroflex Circuit Technology
|
| 5962H9651301VXX |
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class V, QML. Lead finish optional. Total dose 1E6 rads(Si).
|
Aeroflex Circuit Technology
|
| 5962H9651201VCX |
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class V, QML. Lead finish optional. Total dose 1E6 rads(Si).
|
Aeroflex Circuit Technology
|
| 5962H9651301VCX |
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class V, QML. Lead finish optional. Total dose 1E6 rads(Si).
|
Aeroflex Circuit Technology
|
